Current conduction in Schottky barrier diodes with poly(propylene glycol)-b-polystyrene block copolymer interfacial layer

Abstract

Polymeric materials have gained great importance in electron devices. There has been considerable number of studies on block copolymers due to enhanced features that appear after co-polymerization. In this study, poly (propylene glycol)-b-polystyrene block copolymer has been synthesized and Schottky barrier diodes (SBDs) have been fabricated with this block copolymer. Current-voltage (I-V) measurements have been conducted at room temperature in order to investigate electrical characteristics and current conductions governing in these SBDs. Series resistance and shunt resistance of the SBDs have been calculated using Ohm’s law. Ideality factor, reverse saturation current and zero-bias barrier height of the SBDs have been extracted from the forward-bias I-V data. Fabricated SBDs exhibited high rectifying ratio of the order 10⁴. Also, current conduction mechanisms and the density of interface states in the SBDs have been investigated. Calculated values of density of interface states in the SBDs are on the order of 10¹³ which is acceptable for this kind of SBDs having polymeric interfacial layer.