A comparative study of characteristics of AZO based MISIM photodetectors with Al2O3 and SiO2 passivation layers

Abstract

This paper reports aluminum (Al) doped zinc oxide (AZO) based metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (U) photodetectors. Spray-coated Al₂O₃ and sputtered SiO₂ have been used as passivation-layer for two different sets of MISIM devices, respectively. The spray-coated Al₂O₃ passivation-layer has been used first-time for AZO based MISIM U-photodetectors. A comparative study of current versus voltage characteristics of MISIM and MSM (without passivation-layer) devices have been done systematically. The MISIM devices with Al₂O₃ passivation-layer showed better performance than MSM and MISIM (with SiO₂) U-photodetectors. These AZO based MISIM (with spray-coated Al₂O₃) U-photodetectors can be used for low-cost optoelectronic applications.