Structural and optical properties of n-type porous silicon fabricated in dark

Abstract

The n-type porous silicon has been fabricated under dark condition. SEM picture shows appreciable porosity with even distribution of pores with pore size ranging from 280 to 570 nm. XRD and FTIR confirm porous silicon (PSi) formation. Photoluminescence gives characteristic yellow orange emission of PSi with peak at 607.5 nm. Raman spectra show red shift of peak at some spots and Raman enhancement of intensity at some other spots along with the characteristic crystalline Si peak.