Ashery, A, Solid State Electronics Lab, Physics Department, Physics Division, National Research Center, Dokki, Giza, Egypt, Egypt
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Vol 56, No 3 (2018): Indian Journal of Pure & Applied Physics - Articles
Temperature dependence of J–V and C–V characteristics of n-InAs/p-GaAs heterojunctions prepared by flash evaporation technique and liquid phase epitaxy
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Indian Journal of Pure & Applied Physics (IJPAP)