Analysis of density and time constant of interface states of MIS device by conductance method

Abstract

The density and time constant of interface states of Au/Si₃N₄/n-Si (MIS) device have been analyzed by conductance method. The capacitance and conductance measurements of the device have been performed at various frequencies in the range of 1 kHz-1 MHz. Experimental results show that G_p/ω-log(f) plots for each voltage value give a peak because of the presence of interface states. The density (N_ss) and time constant () of interface states have been calculated from maximum value of the peak. The values of N_ss and range from 2.49×10¹³ eV^-1cm^-2 to 7.57×10¹² eV^-1cm^-2 and from 2.67×10^-5s to 1.67×10^-5s, respectively.